Features: • Low Noise 1.3 dB N.F.• High Gain 22 dB Gain• Frequency Range : 9 - 12 GHz• 50 Zin / Zout• 10 dB Input / Output Return Loss• 8 dBm Output Power at 1dB gain compression• Chip size : 1.4 mm X 0.9 mm• Substrate Thickness : 75 m• Bond P...
XLNA2S.02: Features: • Low Noise 1.3 dB N.F.• High Gain 22 dB Gain• Frequency Range : 9 - 12 GHz• 50 Zin / Zout• 10 dB Input / Output Return Loss• 8 dBm Output Power at 1dB...
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Symbol | Parameters/Conditions | Min | Max | Units |
Vd 1 2 | Drain Supply Voltage | 5 | Volts | |
Vg 1 2 | Gate Supply Voltage | -0.6 | 0.4 | Volts |
Id total | Total drain current | 60 | mA | |
Ig total | Total gate current | 0.1 | mA | |
Pin | RF input power | 30 | dBm | |
T ch | Operating channel temperature | 150 | ||
T max | Max assembly temperature | 300* | ||
T stg | Max storage temperature | -65 | 165 | |
T base | Maximum base plate temperature | 140 |
* 30 minute maximum
The Rockwell XLNA2S.02 is a PHEMT low noise amplifier that operates from 9 to 12 GHZ .This 2 stage amplifier has 22 dB nominal gain with 1.3 dB nominal noise figure and 8 dBm P1dB compression output power. This MMIC is unconditionally stable.