Features: Balanced DesignExcellent Input/Output MatchSelf-biased Architecture14.0 dB Small Signal Gain2.5 dB Noise Figure100% On-Wafer RF, DC and Noise Figure Testing100% Visual Inspection to MIL-STD-883Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 85 mA I...
XL1001: Features: Balanced DesignExcellent Input/Output MatchSelf-biased Architecture14.0 dB Small Signal Gain2.5 dB Noise Figure100% On-Wafer RF, DC and Noise Figure Testing100% Visual Inspection to MIL-ST...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id) | 85 mA |
Input Power (Pin) | +15.0dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table1 |
Channel Temperature (Tch) | MTTF Table1 |
1) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's two stage balanced 17.0-35.0 GHz GaAs MMIC low noise amplifier XL1001 has a small signal gain of 14.0 dB with a noise figure of 2.5 dB across the band. This MMIC XL1001 uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip XL1001 has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.