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X22C12

Features: • High Performance CMOS -150ns RAM Access Time• High Reliability -Store Cycles: 1,000,000 -Data Retention: 100 Years• Low Power Consumption -Active: 40mA Max. -Standby: 100A Max.• Infinite Array Recall, RAM Read and Write Cycles• Nonvolatile Store Inhibit: V...

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SeekIC No. : 004547068 Detail

X22C12: Features: • High Performance CMOS -150ns RAM Access Time• High Reliability -Store Cycles: 1,000,000 -Data Retention: 100 Years• Low Power Consumption -Active: 40mA Max. -Standby: 1...

X22C12 Data Sheet

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Part Number:
X22C12
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High Performance CMOS
   -150ns RAM Access Time
• High Reliability
   -Store Cycles: 1,000,000
   -Data Retention: 100 Years
• Low Power Consumption
   -Active: 40mA Max.
   -Standby: 100A Max.
• Infinite Array Recall, RAM Read and Write Cycles
• Nonvolatile Store Inhibit: VCC = 3.5V Typical
• Fully TTL and CMOS Compatible
• JEDEC Standard 18-Pin 300-mil DIP
• 100% Compatible with X2212
   -With Timing Enhancements


Pinout

Connection Diagram


Specifications

Temperature under Bias .................. 65°C to +135°C
Storage Temperature ....................... 65°C to +150°C
Voltage on any Pin with
      Respect to VSS ....................................... 1V to +7V
D.C. Output Current .................................................. 5mA
Lead Temperature
         (Soldering, 10 seconds) ................................ 300°C


Description

The X22C12 is a 256 x 4 CMOS NOVRAM featuring a high-speed static RAM overlaid bit-for-bit with a nonvolatile E2PROM. The NOVRAM design allows data to be easily transferred from RAM to E2PROM (STORE) and from E2PROM to RAM (RECALL). The STORE operation is completed within 5ms or less and the RECALL is completed within 1ms.

Xicor NOVRAMs are designed for unlimited write operations to the RAM, either RECALLs from E2PROM or writes from the host. The X22C12 will reliably endure 1,000,000 STORE cycles. Inherent data retention is greater than 100 years.




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