X2210DMB

The X2210DMB is designed as one kind of 64 x 4 NOVRAM featuring a high-speed ststic RAM overlaid bit-for-bit with a nonvolatile EPROM. This device is fabri-cated with the same reliable N-channel floating gate MOS technology used in all Xicor 5V nonvolatile memories. The X2210DMB features the JEDEC approved pinout for 4-bit-wide memories, compatible with industry standard RAMs. And the \NOVRAM design allows data to be easily transferred from RAM to EPROM and from EPROM to RAM (recall). The store operation is completed in 10 ms or less and the recall is typically completed in 1 us.

Features of the X2210DMB are:(1)single 5V supply;(2)fully TTL compatible;(3)infinite EPROM array recall, RAM read and write cycles;(4)access time of 300 ns max.;(5)nonvolatile store inhibit: Vcc=3 V typical;(6)high reliability: the store cycles is 100,000 and the data retention is 100 years;(7)JEDEC standard 18-pin package.

The absolute maximum ratings of the X2210DMB can be summarized as:(1)temperature under bias:-65 to +135;(2)storage temperature:-65 to +150;(3)voltage on any pin with respect to griund:-1.0V to +7V;(4)D.C. output current:5 mA;(5)lead temperature (soldering, 10 seconds):300. If you want to know more information such as the electrical characteristics about the X2210DMB, please download the datasheet in www.seekic.com or www.chinaicmart.com .