Features: Integrated Gain, Doubler and Driver StagesSelf-biased Architecture+21.0 dBm Output Saturated Power40.0 dBc Fundamental SuppressionOn-Chip ESD Protection100% On-Wafer RF, DC and Output Power Testing100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd)S...
X1007-BD: Features: Integrated Gain, Doubler and Driver StagesSelf-biased Architecture+21.0 dBm Output Saturated Power40.0 dBc Fundamental SuppressionOn-Chip ESD Protection100% On-Wafer RF, DC and Output Powe...
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Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) |
+6.0 VDC 300 mA +0.3 VDC TBD -65 to +165 -55 to MTTF Table 1 MTTF Table 1 |
Mimix Broadband's 13.5-17.0 / 27.0-34.0 GHz GaAs MMIC doubler integrates a gain stage, passive doubler and driver amplifier onto a single device. The X1007-BD has a self-biased architecture requiring a single positive supply (+5V) only and integrated on-chip bypassing capacitor eliminating the need for external capacitor. This MMIC uses Mimix Broadband's 0.15um GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The X1007-BD has integrated ESD structures for protection and surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. The X1007-BD is well suited for Millimeter wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.