Features: ·Excellent Mixer Driver·2-Stage Active Design·Can be Used to Drive XR1002 Receiver·+15 dBm Output Drive·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883·Method 2010Specifications Supply Voltage (Vcc) +6.0 VDC Supply Current (Id) 110 mA Gate...
X1004-BD: Features: ·Excellent Mixer Driver·2-Stage Active Design·Can be Used to Drive XR1002 Receiver·+15 dBm Output Drive·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883·...
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Supply Voltage (Vcc) | +6.0 VDC |
Supply Current (Id) | 110 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (RF Pin) | +15.0 dBm |
Storage Temperature (Tstg) | -65 to +165 OC |
Operating Temperature (Ta) | -55 to MTTF Table 1 |
Junction Temperature (Tch) | MTTF Table 1 |
(1) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's two stage 10.0-13.0/20.0-26.0 GHz GaAs MMIC doubler has a +15.0 dBm output drive and is an excellent LO doubler that can be used to drive fundamental mixer devices. The X1004-BDis also well suited to drive Mimix's XR1002 receiver device. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The X1004-BD has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.