Features: ·Integrated Doubler and Power Amplifier·Excellent Saturated Output Stage·+25.0 dBm Output Power·50.0 dBc Fundamental SuppressionSpecifications Supply Voltage (Vcc) +6.0 VDC Supply Current (Id) 800 mA Gate Bias Voltage (Vg) +0.3 VDC Input Power (RF Pin) TBD Storage Te...
X1001-QK: Features: ·Integrated Doubler and Power Amplifier·Excellent Saturated Output Stage·+25.0 dBm Output Power·50.0 dBc Fundamental SuppressionSpecifications Supply Voltage (Vcc) +6.0 VDC Supply...
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Supply Voltage (Vcc) | +6.0 VDC |
Supply Current (Id) | 800 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (RF Pin) | TBD |
Storage Temperature (Tstg) | -65 to +165 OC |
Operating Temperature (Ta) | -55 to MTTF Table 1 |
Junction Temperature (Tch) | MTTF Table 1 |
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's 18.0-21.0/36.0-42.0 GHz GaAs doubler integrates a doubler, a buffer amplifier and 4-stage power amplifier. The X1001-QK provides better than +25.0 dBm output power and has excellent fundamental rejection. The X1001-QK comes in a 7x7mm QFN package that is RoHS compliant. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.