Features: ·Integrated Doubler and Power Amplifier·Excellent Saturated Output Stage·+26.0 dBm Output Power·50.0 dBc Fundamental Suppression·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vcc) +6.0 VDC Supply Cur...
X1001-BD: Features: ·Integrated Doubler and Power Amplifier·Excellent Saturated Output Stage·+26.0 dBm Output Power·50.0 dBc Fundamental Suppression·100% On-Wafer RF, DC and Output Power Testing·100% Visual I...
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Supply Voltage (Vcc) | +6.0 VDC |
Supply Current (Id) | 800 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (RF Pin) | +15.0 dBm |
Storage Temperature (Tstg) | -65 to +165 OC |
Operating Temperature (Ta) | -55 to MTTF Table 1 |
Junction Temperature (Tch) | MTTF Table 1 |
(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's 18.0-21.0/36.0-42.0 GHz GaAs MMIC doubler integrates a doubler and 4-stage power amplifier. The device provides better than +26.0 dBm output power and has excellent fundamental rejection. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The X1001-BD has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. The X1001-BD is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.