X0110

The X0110 is designed as one kind of silicon controlled rectifier that is high performance PNPN device diffused with TAG's proprietary top glass process. These parts are intended for general purpose, high speed, high voltage applications.

The absolute maximum ratings of the X0110 can be summarized as:(1)on-state current: 0.8 A;(2)average on-state current: 0.5 A;(3)nonrept. on-state current: 9 A;(4)fusing current: 0.32 As;(5)peak reverse gate voltage: 8 V;(6)peak gate current: 1 A;(7)peak gate dissipation: 2 W;(8)gate dissipation: 0.1 W;(9)operating temperature: -55 to +125 ;(10)storage temperature: -65 to +150 ;(11)soldering temperature: 250 .

The electrical characteristics of X0110 can be summarized as:(1)off-state leakage current: 0.1 mA;(2)on-state voltage: 1.50 V;(3)on-state threshold voltage: 0.9 V;(4)on-state slope resistance: 400 m;(5)gate trigger current: 5 to 20 uA;(6)gate trigger voltage: 0.8 V;(7)holding current: 5 mA;(8)latching current: 6 mA;(9)critical rate of voltage rise: 50 V/us;(10)critical rate of current rise: 30 A/us. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .