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WV3HG264M64EEU-D4

Features: ` 200-pin, dual in-line memory module (SO-DIMM)` Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200` Utilizes 800*, 667*, 533 and 400 Mb/s DDR2 SDRAM components` VCC = 1.8V ±0.1V` VCCSPD = 1.7V to 3.6V` JEDEC standard 1.8V I/O (SSTL_18-compatible)` Differential data st...

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SeekIC No. : 004546979 Detail

WV3HG264M64EEU-D4: Features: ` 200-pin, dual in-line memory module (SO-DIMM)` Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200` Utilizes 800*, 667*, 533 and 400 Mb/s DDR2 SDRAM components` VCC = 1...

WV3HG264M64EEU-D4 Data Sheet

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Part Number:
WV3HG264M64EEU-D4
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` 200-pin, dual in-line memory module (SO-DIMM)
` Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200
` Utilizes 800*, 667*, 533 and 400 Mb/s DDR2 SDRAM components
` VCC = 1.8V ±0.1V
` VCCSPD = 1.7V to 3.6V
` JEDEC standard 1.8V I/O (SSTL_18-compatible)
` Differential data strobe (DQS, DQS#) option
` Four-bit prefetch architecture
` DLL to align DQ and DQS transitions with CK
` Multiple internal device banks for concurrent operation
` Supports duplicate output strobe (RDQS/RDQS#)
` Programmable CAS# latency (CL): 3, 4, 5 and 6
` Adjustable data-output drive strength
` On-die termination (ODT)
` Posted CAS# latency: 0, 1, 2, 3 and 4
` Serial Presence Detect (SPD) with EEPROM
` 64ms: 8,192 cycle refresh
` Gold edge contacts
` Dual Rank
` RoHS compliant
` JEDEC Package option
`200 Pin (SO-DIMM)
`PCB 30.00mm (1.181") TYP.


Specifications

Symbol Parameter MIN MAX Unit
VCC

VIN, VOUT

TSTG		 Voltage on VCC pin relative to VSS

Voltage on any pin relative to VSS

Storage Temperature		 -0.5

-0.5

-55		 2.3

2.3

100		 V

V

IL Input leakage current; Any input 0V<VIN<VCC; VREF input
0V<VIN<0.95V; Other pins not under test = 0V		 Command/Address,
RAS#, CAS#, WE#,
CS#, CKE		 -5 5 µA
CK, CK# -10 10 µA
DM -5 5 µA
IOZ Output leakage current;
0V<VOUT<VCCQ; DQs and ODT are disable		 DQ, DQS, DQS# -5 5 µA
IVREF VREF leakage current; VREF = Valid VREF level -18 18 µA



Description

The WV3HG264M64EEU-D4 is a 2x64Mx64 Double Data Rate DDR2 SDRAM high density SO-DIMM. This memory module WV3HG264M64EEU-D4 consists of sixteen 64Mx8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages, mounted on a 200-pin SO-DIMM FR4 substrate.




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