Features: `Unbuffered 240-pin, dual in-line memory module`Fast data transfer rates: PC2-6400*, PC2-5300*,PC2-4300 and PC2-3200`VCC = VCCQ = 1.8V`VCCSPD = +1.7V to +3.6V`Differential data strobe (DQS, DQS#) option`Four-bit prefetch architecture`DLL to align DQ and DQS transitions with CK`Multiple i...
WV3HG2128M64EEU-D6: Features: `Unbuffered 240-pin, dual in-line memory module`Fast data transfer rates: PC2-6400*, PC2-5300*,PC2-4300 and PC2-3200`VCC = VCCQ = 1.8V`VCCSPD = +1.7V to +3.6V`Differential data strobe (DQS...
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Features: `VLP (very low profi le) 240-pin, dual in-line memory module`Fast data transfer rates: P...
Features: * 240-pin, dual in-line memory module* Fast data transfer rates: PC2-6400*, PC2-5300*,PC...
Features: ` 200-pin, dual in-line memory module (SO-DIMM)` Fast data transfer rates: PC2-6400*, PC...
Symbol |
Parameter |
Min |
Max |
Units | |
VCC |
Voltage on VCC pin relative to VSS |
-0.5 |
2.3 |
V | |
VIN, VOUT |
Voltage on any pin relative to VSS |
-0.5 |
2.3 |
V | |
TSTG |
Storage Temperature |
-55 |
100 |
||
IL |
Input leakage current; Any input 0V<VIN<VCC; VREF input 0V,VIN,0.95V; Other pins not under test = 0V |
Command/Address, RAS#, CAS#, WE#, |
-80 |
80 |
A |
CS#, CKE |
-40 |
40 |
A | ||
CK, CK# |
-30 |
30 |
A | ||
DM |
-10 |
10 |
A | ||
IOZ |
Output leakage current; 0V<VIN<VCC; DQs and ODT are Disable | DQ, DQS, DQS# |
-10 |
10 |
A |
IVREF |
VREF leakage current; VREF = Valid VREF level |
-32 |
32 |
A |
The WV3HG2128M64EEU-D6 is a 2x128Mx64 Double Data Rate DDR2 SDRAM high density module. This memory module consists of sixteen 128Mx8 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages, mounted on a 240-pin DIMM FR4 substrate.