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WV3HG128M72EEU-PD4

Features: · Unbuffered 200-pin (SO-DIMM) small-outline dual in-line memory module· Support ECC detection and correction· Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200·VCC = VCCQ = 1.8V ±0.1V· VCCSPD = 1.7V to 3.6V· JEDEC standard 1.8V I/O (SSTL_18-compatible)· Differential ...

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SeekIC No. : 004546972 Detail

WV3HG128M72EEU-PD4: Features: · Unbuffered 200-pin (SO-DIMM) small-outline dual in-line memory module· Support ECC detection and correction· Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200·VCC = V...

WV3HG128M72EEU-PD4 Data Sheet

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Part Number:
WV3HG128M72EEU-PD4
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Unbuffered 200-pin (SO-DIMM) small-outline dual in-line memory module
· Support ECC detection and correction
· Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200
·VCC = VCCQ = 1.8V ±0.1V
· VCCSPD = 1.7V to 3.6V
· JEDEC standard 1.8V I/O (SSTL_18-compatible)
· Differential data strobe (DQS, DQS#) option
· Differential clock input (CK,CK#)
· Four-bit prefetch architecture
· Multiple internal device banks for concurrent operation
· Programmable CAS# latency (CL): 3 4, 5*, and 6*
· Adjustable data-output drive strength
· 7.8µs average periodic refresh interval
· On-die termination (ODT)
· Posted CAS# latency: 0, 1, 2, 3 and 4
· Serial Presence Detect (SPD) with EEPROM
· Auto & self refresh (64ms: 8,192 cycle refresh)
· Gold edge contacts
· RoHS compliant
· JEDEC proposed pin-out
· Package option
   • 200 Pin SO-DIMM: 30.00mm (1.181") TYP


Specifications

Symbol
Parameter
Min
Max
Units
VCC
 Voltage on VCC pin relative to VSS
-0.5
2.3
V
VIN, VOUT
 Voltage on any pin relative to VSS
-0.5
2.3
V
IL
 Input leakage current; Any input 0V<VIN<VCC; VREF input
0V,VIN,0.95V; Other pins not under test = 0V		 Command/Address,RAS#, CAS#, WE#,
-45
45
µA
CS#, CKE
-45
45
µA
CK, CK#
-10
10
µA
DM
-5
5
µA
IOZ
 Output leakage current; 0V<VIN<VCC; DQs and ODT are disable DQ, DQS, DQS#
-5
5
µA
IVREF
 VREF leakage current; VREF = Valid VREF level
-18
18
µA



Description

The WV3HG128M72EEU-PD4 is a 128Mx72 Double Data Rate DDR2 SDRAM high density module. This memory module consists of nine 128Mx8 bit DDR2 Synchronous DRAMs in FBGA packages, mounted on a 200-pin SO-DIMM FR4 substrate.




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