Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON) <600m@VGS =-10V*Simple G ate Drive*Small p ackag e Outline*Fast Switching Speed*SOT-32 3 PackageApplication*Design er with best combination of fast switching*Low on-resistance*Cost-effectivenessSpecifications Rating Symbol Value ...
WTU1333: Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON) <600m@VGS =-10V*Simple G ate Drive*Small p ackag e Outline*Fast Switching Speed*SOT-32 3 PackageApplication*Design er with best com...
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Rating | Symbol | Value | Unit |
Drain-Source Voltage | VDS | -20 | V |
Gate-Source Voltage | VGS | ±12 | V |
Continuous Drain Current3,(TA=25) ,(TA=70) |
ID | -550 | mA |
-440 | |||
Pulsed Drain Current1,2 | IDM | 2.5 | mA |
Total Power Dissipation(TA=25) | PD | 0.35 | W |
Maximum Thermal Resistac e Junction-ambient3 | RJA | 360 | /W |
Operating Junction and Storage Temperature Range | TJ,T stg | - 55~+150 |