Features: *Super high dense cell design for low RDS(ON)RDS(ON)<80m@VGS=10V*Simple Drive Requirement*Low Gate Charge*SOT-223 PackageSpecifications Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Cu...
WTN9973: Features: *Super high dense cell design for low RDS(ON)RDS(ON)<80m@VGS=10V*Simple Drive Requirement*Low Gate Charge*SOT-223 PackageSpecifications Parameter Symbol Rating Unit Dra...
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Parameter |
Symbol |
Rating |
Unit |
Drain-Source Voltage |
VDS |
60 |
V |
Gate-Source Voltage |
VGS |
±20 |
V |
Continuous Drain Current3 ,VGS@10V(TA=25) ,VGS@10V(TA=70) Pulsed Drain Current1,2 |
ID |
3.9 |
A
|
2.5 | |||
IDM |
20 | ||
Total Power Dissipation(TA=25 ) |
PD |
2.7 |
W |
Maximum Junction-ambient3 |
RJA |
45 |
/W |
Operating Junction and Storage Temperature Range |
TJ,TSTG |
-55 to +150 |