Features: ·Super High Dense Cell Design For Low RDS(ON) RDS(ON) <90m Ω@VGS =-10V·Simple Drive Requirement·Lower On-resistance·Fast Switching Characteristic·TO-252 Package·Super High Dense Cell Design For Low RDS(ON) RDS(ON) <90m Ω@VGS =-10V·Simple Drive Requirement·Lower On-resis...
WTD9575: Features: ·Super High Dense Cell Design For Low RDS(ON) RDS(ON) <90m Ω@VGS =-10V·Simple Drive Requirement·Lower On-resistance·Fast Switching Characteristic·TO-252 Package·Super High Dense C...
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·Super High Dense Cell Design For Low RDS(ON) RDS(ON) <90m Ω@VGS =-10V
·Simple Drive Requirement
·Lower On-resistance
·Fast Switching Characteristic
·TO-252 Package
·Super High Dense Cell Design For Low RDS(ON) RDS(ON) <90m Ω@VGS =-10V
·Simple Drive Requirement
·Lower On-resistance
·Fast Switching Characteristic
·TO-252 Package
Rating | Symbol | Value | Unit |
---|---|---|---|
Drain-Source Voltage | VDS | -60 | V |
Gate-Source Voltage | VGS | ±25 | |
Continuous Drain Current, (VGS@10V, TC=25) , (VGS@10V, TC=100) |
ID | -15 -9.5 |
A |
Pulsed Drain Current1 | IDM | -45 | |
Total Power Dissipation(TC=25) | PD | 36 | W |
Maximum Thermal Resistace Junction-case | RJC | 3.5 | /W |
Maximum Thermal Resistace Junction-ambient | RJA | 110 | /W |
Operating Junction and Storage Temperature Range | TJ,Tstg | - 55~+150 |
Note: 1. Pulse width limited by safe operating area.
2. Pulse width 300s, duty cycle 2%.