Features: *Super high dense cell design for low RDS(ON)RDS(ON)<55 m @V =-10VRDS (ON) <85 m @VGS =-4.5V*Rugged and Reliable*SO-8 PackagePinoutSpecifications Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Cont...
WT9435M: Features: *Super high dense cell design for low RDS(ON)RDS(ON)<55 m @V =-10VRDS (ON) <85 m @VGS =-4.5V*Rugged and Reliable*SO-8 PackagePinoutSpecifications Parameter Symbol Rating ...
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Parameter |
Symbol |
Rating |
Unit |
Drain-Source Voltage |
VDS |
-30 |
V |
Gate-Source Voltage |
VGS |
±12 |
V |
Continuous Drain Current (TJ =125)(1) Pulsed Drain Current(2) |
ID |
-4.8 |
A |
IDM |
-24 |
A | |
Drain-Source Diode Forward Current(1) |
IS |
-1.7 |
A |
Power Dissipation(1) |
PD |
2.5 |
W |
Maximax Junction-to-Ambient |
RJA |
50 |
/W |
Operating Junction and Storage Temperature Range |
TJ,TSTG |
-55 to +150 |