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WT6920AM

Features: *Super high dense cell design for low RDS(ON)RDS(ON)<35m@VGS = 10VRDS(ON)<62m@VGS = 4.5V*Dual N MOSFET Package*Simple Drive Requirement*SO-8 PackagePinoutSpecifications Parameter Symbol Limit Units Drain-Source VoltageGate-Source Voltage VDSVGS 40±20 VV Continuous ...

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SeekIC No. : 004546887 Detail

WT6920AM: Features: *Super high dense cell design for low RDS(ON)RDS(ON)<35m@VGS = 10VRDS(ON)<62m@VGS = 4.5V*Dual N MOSFET Package*Simple Drive Requirement*SO-8 PackagePinoutSpecifications Paramete...

WT6920AM Data Sheet

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Part Number:
WT6920AM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

*Super high dense cell design for low RDS(ON)
RDS(ON)<35m@VGS = 10V
RDS(ON)<62m@VGS = 4.5V
*Dual N MOSFET Package
*Simple Drive Requirement
*SO-8 Package




Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Units
Drain-Source Voltage

Gate-Source Voltage		 VDS

VGS		 40

±20		 V

V
Continuous Drain Current (1) (TA=25 )
(Tc=70 )

Pulsed Drain Current (2)

Drain-Source Diode Forward Current (1)

Maximum Power Dissipation (TA=25 )
(Tc=70 )		 ID


IDM

IS


PD		 5
4.2

20

1.7

2
1.44		 A


A

A


W
Maximax Junction-to-Ambient(1) RJA 62.5 /W

Operating Junction and Storage
Temperature Range		 TJ,Tstg
-55 ~ 150




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