Features: *Super High Dense Cell Design For Low RDS(ON)RDS(ON)<50m@VGS=10V*Rugged and Reliable*Simple Drive Requirement*Fast Switching*1.8V Gate Rated*SOT-23 PackageApplication*Power Management in Notebook Computer*Portable Equipment*Battery Powered SystemSpecifications Parameter Symbol Limit...
WT6401: Features: *Super High Dense Cell Design For Low RDS(ON)RDS(ON)<50m@VGS=10V*Rugged and Reliable*Simple Drive Requirement*Fast Switching*1.8V Gate Rated*SOT-23 PackageApplication*Power Management i...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Symbol | Limit | Unit |
Drain-Source Voltage | VDSS | -12 | V |
Gate-Source Voltage | VGS | ±8 | |
Continuous Drain Current3 ,VGS@10V(TA= 25) ,VGS@10V(TA= 70) Pulsed Drain Current1 |
ID | - 4.3 -3.4 |
A |
IDM | -12 | ||
Total Power Dissipation(TA=25 ) |
PD | 1.38 | W |
Maximum Junction-ambient3 | RJA | 90 | /W |
Operating and storage temperature range | Tj, Tstg | -55 to +150 |