Features: `Super high dense cell design for low RDS(ON) RDS(ON)<11 m @V =10V ,R D S ( O N ) <15 m @VG S =4.5V`Rugged and Reliable`SO-8 PackageSpecifications CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 30 Gate-Source Voltage VGS V ±20 Continuous Drain...
WT4410M: Features: `Super high dense cell design for low RDS(ON) RDS(ON)<11 m @V =10V ,R D S ( O N ) <15 m @VG S =4.5V`Rugged and Reliable`SO-8 PackageSpecifications CHARACTERISTICS SYMBOL UNIT...
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CHARACTERISTICS | SYMBOL | UNIT | RATING |
Drain-Source Voltage | VDS | V | 30 |
Gate-Source Voltage | VGS | V | ±20 |
Continuous Drain Current (T =125)(1) | ID | A | 10 |
Pulsed Drain Current(2) | IDM | A | 30 |
Drain-Source Diode Forward Current (1) | IS | A | 2.3 |
Power Dissipation (1) | PD | W | 2.5 |
Maximax Junction-to-Ambient | RJA |
50 | |
Operating Junction and Storage Temperature Range |
TJ, Tstg | -55 to 150 |