Features: Access Times of 35ns (SRAM) and 150ns (EEPROM)Access Times of 45ns (SRAM) and 120ns (EEPROM)Access Times of 70ns (SRAM) and 300ns (EEPROM)Packaging66 pin, PGA Type, 1.075 square HIP, Hermetic Ceramic IP (H1) (Package 400)68 lead, Hermetic CQFP (G2T), 22mm (0.880 ) square(Package 509). D...
WSE128K16-XXX: Features: Access Times of 35ns (SRAM) and 150ns (EEPROM)Access Times of 45ns (SRAM) and 120ns (EEPROM)Access Times of 70ns (SRAM) and 300ns (EEPROM)Packaging66 pin, PGA Type, 1.075 square HIP, Herm...
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Access Times of 35ns (SRAM) and 150ns (EEPROM)
Access Times of 45ns (SRAM) and 120ns (EEPROM)
Access Times of 70ns (SRAM) and 300ns (EEPROM)
Packaging
66 pin, PGA Type, 1.075" square HIP, Hermetic Ceramic IP (H1) (Package 400)
68 lead, Hermetic CQFP (G2T), 22mm (0.880") square(Package 509). Designed to fit JEDEC 68 lead 0.990" CQFJ ootprint (Fig. 2)
128Kx16 SRAM
128Kx16 EEPROM
Organized as 128Kx16 of SRAM and 128Kx16 of EEPROM emory with separate Data Buses
Both blocks of memory are User Configurable as 256Kx8
Low Power CMOS
Commercial, Industrial and Military Temperature Ranges
TTL Compatible Inputs and Outputs
Built-in Decoupling Caps and Multiple Ground Pins for ow Noise Operation
Weight - 13 grams typical
Parameter | Symbol | Min | Max | Unit |
Operating Temperature | TA | -55 | +125 | °C |
Storage Temperature | TSTG | -65 | +150 | °C |
Signal Voltage Relative to GND | VG | -0.5 | Vcc+0.5 | V |
Junction Temperature | TJ | 150 | °C | |
Supply Voltage | VCC | -0.5 | 7.0 | V |