Features: • Ultra-Fast Access Time• Immune to Latch-UP- 35 ns - Up to 200 mA• Low Power Consumption • ESD Protection Exceeds 2000V• Fast Programming • Available in 300 Mil DIP and PLDCCPinoutSpecificationsStorage Temperature............................65° to + 1...
WS57C71C: Features: • Ultra-Fast Access Time• Immune to Latch-UP- 35 ns - Up to 200 mA• Low Power Consumption • ESD Protection Exceeds 2000V• Fast Programming • Available i...
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PinoutSpecificationsStorage Temperature....................65° to + 150°CVoltage on any Pin withRe...
PinoutDescriptionThe WS57C191C-55 is one member of the WS57C191 family which is designed as the ex...
• Ultra-Fast Access Time
• Immune to Latch-UP- 35 ns - Up to 200 mA
• Low Power Consumption
• ESD Protection Exceeds 2000V
• Fast Programming
• Available in 300 Mil DIP and PLDCC
The WS57C71C is a High Performance 256K UV Erasable Electrically Re-Programmable Read Only Memory(RPROM). It is manufactured in an advanced CMOS technology and utilizes WSI's patented self-aligned split gateEPROM cell.
The industry standard PROM pin configuration of the WS57C71C provides an easy upgrade path from a 16K x 8device.
This RPROM is capable of operating at speeds as fast as 35 ns address access time, which enables it to be useddirectly with today's fast microprocessors and DSP processors without introducing any wait states. All inputs andoutputs are TTL compatible. The WS57C71C is a low power device even when operated at its fastest speed. TheDIP version is packaged in a 300 mil wide DIP package saving board space for the user.