WS57C256F-55C

The WS57C256F-55C is one member of the WS57C256 family which is designed as the extremely High Performance 32K x 8 UV Erasable Electrically Re-Programmable Read Only Memory (RPROM) that has six points of features: (1)fast access time: tACC = 35 ns and tCE = 35 ns; (2)low power consumption: 200 A standby Icc; (3)immune to latch-up: up to 200 mA; (4)available in 300 mil DIP and PLDCC; (5)ESD protection exceeds 2000 V;(6)DESC SMD No. 5962-86063.

This device WS57C256F-55C is manufactured using an advanced CMOS process technology enabling it to operate at speeds as fast as 35 ns Address Access Time (tACC) and 35 ns Chip Enable Time (tCE). And it is available in a variety of package types including the space saving 300 Mil DIP, the surface mount PLDCC, and other windowed and non-windowed options, and the standard JEDEC EPROM pinouts of this device provide for automatic upgrade density paths for current 64K and 128K EPROM users.

The absolute maximum ratings of the WS57C256F-55C can be summarized as:(1)Storage Temperature: -65°C to + 150°C;(2)Voltage on any Pin with Respect to Ground: -0.6 V to +7 V;(3)VPP and A9 with Respect to Ground: -0.6 V to +14 V;(4)ESD Protection: >2000 V.

And the electrical characteristics of this device WS57C256F-55C can be summarized as:(1)Input Low Voltage:0.1 V to 0.8 V;(2)Input High Voltage: 2.0 to VCC + 0.3 V;(3)Output Low Voltage: 0.4 V;(4)Output High Voltage: 2.4 V;(5)VPP Supply Current: 100 A;(6)VPP Read Voltage: VCC - 0.4 to Vcc V;(7)Input Leakage Current: -10 to 10 A;(8)Output Leakage Current: -10 to 10 A. If you want to know more information about the WS57C191C-55, please download the datasheet in www.seekic.com or www.chinaicmart.com .