Pinout SpecificationsStorage Temperature........................65° to + 150°CVoltage on any Pin withRespect to Ground ................................0.6V to +7VVPP with Respect to Ground...............0.6V to + 14VVCC Supply Voltage withRespect to Ground ...............................0.6V to +7...
WS27C256L: Pinout SpecificationsStorage Temperature........................65° to + 150°CVoltage on any Pin withRespect to Ground ................................0.6V to +7VVPP with Respect to Ground.............
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The WS27C256L is a performance oriented 256K UV Erasable Electrically Programmable Read Only Memory organized as 32K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at speeds up to 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size.
The WS27C256L 256K EPROM provides 32K of 8 bit wide code store capacity for DSP, microprocessor, and microcontroller-based systems. Its 120 nsec access time over the full Military temperature range provides the potential of no-wait state operation. And where this parameter is important, the WS27C256L provides the user with a very fast 35 nsec TOE output enable time.
The WS27C256L is offered in a 28 pin 300 mil skinny CERDIP or the standard 600 mil CERDIP, and also in a 32 pad Ceramic Leadless Chip Carrier (CLLCC) for surface mount applications. All packages incorporate the standard JEDEC EPROM pinout.