Features: SpecificationsDescriptionThe WS-128K32 series is designed as a 4-megabit CMOS SRAM module organized as 128K words by 32 bits;256K x 16 or 512K x 8.The module is constructed on a multilayer ceramic substrate,hermetically sealed,with a welded metal cover,hex-in-line package(HIP) utilizing ...
WS-128K32 series: Features: SpecificationsDescriptionThe WS-128K32 series is designed as a 4-megabit CMOS SRAM module organized as 128K words by 32 bits;256K x 16 or 512K x 8.The module is constructed on a multilayer...
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The WS-128K32 series is designed as a 4-megabit CMOS SRAM module organized as 128K words by 32 bits;256K x 16 or 512K x 8.The module is constructed on a multilayer ceramic substrate,hermetically sealed,with a welded metal cover,hex-in-line package(HIP) utilizing four 128K x 8 SRAM devices.This device is part of white technology's "WHIP" family of memory subsystems.These modules are compatible subsystems.These modules are compatible with most 66-pin HIP packaged SRAM,EEPROM and flash memory modules.The WS-128K32 series is available with access times of 25 to 120 ns over the commercial and military temperature ranges.
Features of this series are:(1)access times of 25ns to 120ns;(2)66-pin.PGA type,1.2 inch square HIP package;(3)configurable as 128Kx32,256Kx16 or 512Kx8;(4)hermetic ceramic package;(5)battery back-up operation;(6)commercial,industrial and military temperature ranges;(7)TTL compatible inputs and outputs,(8)low power CMOS fully ststic design;(9)5 volt power supply;(10)built in decoupling caps and multiple ground pins for low noise operation.
The absoulte maximum ratings of the WS-128K32 series can be summarized as:(1)operating temperature:0 to 70(commercial) and -55 to 125(military);(2)storage temperature:-40 to +85(commercial) and -65 to +150(military);(3)signal voltage relative to GND:-0.5 to +7.0 V.And the recommended operating conditions are:(1)supply voltage:4.5 to 5.5 V;(2)input high voltage:2.2 to Vcc+0.3 V;(3)input low voltage:-0.5 to +0.8 V.