DescriptionThe WMBT3904 is designed as one kind of NPN epitaxial silicon transistor that has two points of features:(1)power dissipation: 225mW; (2)collector current: max. 0.2 A. The guaranteed probed characteristics of the WMBT3904 can be summarized as:(1)Collector-emitter Breakdown Voltage: 40 ...
WMBT3904: DescriptionThe WMBT3904 is designed as one kind of NPN epitaxial silicon transistor that has two points of features:(1)power dissipation: 225mW; (2)collector current: max. 0.2 A. The guaranteed pro...
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Specifications Rating Symbol Value Unit CollectorEmitter Voltage VCEO 150 Vdc Col...
Specifications Rating Symbol Value Unit CollectorEmitter Voltage VCEO 160 Vdc Col...
The WMBT3904 is designed as one kind of NPN epitaxial silicon transistor that has two points of features:(1)power dissipation: 225mW; (2)collector current: max. 0.2 A.
The guaranteed probed characteristics of the WMBT3904 can be summarized as:(1)Collector-emitter Breakdown Voltage: 40 V;(2)Collector-Base Breakdown Voltage: 60 V;(3)Emitter-Base Breakdown Voltage: 6.0 V;(4)Collector Cut-off Current: 50 nA;(5)Transition Frequency: 300 MHz;(6)Collector-Base Capacitance: 4 PF. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .