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WFW10N80

Features: ` RDS(on) (Max 1.05 )@VGS=10V` Gate Charge (Typical 55nC)` Improved dv/dt Capability, High Ruggedness` 100% Avalanche Tested` Maximum Junction Temperature Range (150°C)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 800 V ID Continuous ...

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SeekIC No. : 004545683 Detail

WFW10N80: Features: ` RDS(on) (Max 1.05 )@VGS=10V` Gate Charge (Typical 55nC)` Improved dv/dt Capability, High Ruggedness` 100% Avalanche Tested` Maximum Junction Temperature Range (150°C)Specifications ...

WFW10N80 Data Sheet

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Part Number:
WFW10N80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

` RDS(on) (Max 1.05 )@VGS=10V
` Gate Charge (Typical 55nC)
` Improved dv/dt Capability, High Ruggedness
` 100% Avalanche Tested
` Maximum Junction Temperature Range (150°C)


Specifications

Symbol Parameter
Value
Units
VDSS Drain to Source Voltage
800
V
ID Continuous Drain Current(@TC = 25°C) (Note 1)
10
A
Continuous Drain Current(@TC = 100°C)
6.3
A
IDM Drain Current Pulsed (Note 2)
40
A
VGS Gate to Source Voltage (Note 3)
±30
v
EAS Single Pulsed Avalanche Energy (Note 4)
960
mj
EAR Repetitive Avalanche Energy
26
mj

dv/dt

 Peak Diode Recovery dv/dt
4.0
V/ns
PD Total Power Dissipation(@TC = 25 )
260
W
Derating Factor above 25
2.08
W/
TSTG, TJ Operating Junction Temperature & Storage Temperature
- 55 ~ 150
TL Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300



Description

This Power MOSFET of the WFW10N80 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies.




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