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WFU2N60

Features: RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 600 V ID Continuous Drain ...

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SeekIC No. : 004545681 Detail

WFU2N60: Features: RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)Specifications ...

WFU2N60 Data Sheet

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Part Number:
WFU2N60
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

RDS(on) (Max 5.0 Ω )@VGS=10V
Gate Charge (Typical 9.5nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)


Specifications

Symbol Parameter Value Units
VDSS Drain to Source Voltage 600 V
ID Continuous Drain Current(@TC = 25°C) 1.8 A
Continuous Drain Current(@TC = 100°C) 1.1 A
IDM

VGS

EAS

EAR

dv/dt		 Drain Current Pulsed (Note 1)

Gate to Source Voltage

Single Pulsed Avalanche Energy (Note 2)

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)		 6.0

±30

120

4.4

4.5
 A

V

mJ

mJ

V/ns
PD Total Power Dissipation(@TC = 25 °C) 44 W
Derating Factor above 25 °C 0.35 W/°C
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C
TL Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.		 300 °C



Description

This Power MOSFET of the WFU2N60 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices of the WFU2N60 are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




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