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WFP75N08

Features: RDS(on) (Max 0.015 )@VGS=10V Gate Charge (Typical 80nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 80 V ID Continuous Drain Current(@...

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WFP75N08: Features: RDS(on) (Max 0.015 )@VGS=10V Gate Charge (Typical 80nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175)Specifications Symbo...

WFP75N08 Data Sheet

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Part Number:
WFP75N08
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

RDS(on) (Max 0.015 )@VGS=10V
Gate Charge (Typical 80nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (175)


Specifications

Symbol Parameter Value Units
VDSS Drain to Source Voltage 80 V
ID Continuous Drain Current(@TC = 25) 75 A
Continuous Drain Current(@TC = 100) 52.5 A
IDM Drain Current Pulsed (Note 1) 300 A
VGS Gate to Source Voltage ±20 V
EAS Single Pulsed Avalanche Energy (Note 2) 1310 mJ
EAR Repetitive Avalanche Energy (Note 1) 17.3 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
PD Total Power Dissipation(@TC = 25 ) 173 W
Derating Factor above 25 1.15 W/
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 175
TL Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.		 300



Description

This Power MOSFET of the WFP75N08 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices of the WFP75N08 are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




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