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WFD2N60

Features: RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)Specifications Symbol Parameter Value Units VDSS Drain to Source Voltage 600 V ID Continuous Drain ...

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SeekIC No. : 004545655 Detail

WFD2N60: Features: RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)Specifications ...

WFD2N60 Data Sheet

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Part Number:
WFD2N60
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

RDS(on) (Max 5.0 Ω )@VGS=10V
Gate Charge (Typical 9.5nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)


Specifications

Symbol Parameter Value Units
VDSS Drain to Source Voltage 600 V
ID Continuous Drain Current(@TC = 25°C) 1.8 A
Continuous Drain Current(@TC = 100°C) 1.1 A
IDM

VGS

EAS

EAR

dv/dt		 Drain Current Pulsed (Note 1)

Gate to Source Voltage

Single Pulsed Avalanche Energy (Note 2)

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)		 6.0

±30

120

4.4

4.5
 A

V

mJ

mJ

V/ns
PD Total Power Dissipation(@TC = 25 °C) 44 W
Derating Factor above 25 °C 0.35 W/°C
TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C
TL Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.		 300 °C



Description

This Power MOSFET of the WFD2N60 is produced using Wisdom's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.




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