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WED48S8030E8SI

Features: *Single 3.3V power supply*Fully Synchronous to positive Clock Edge*Clock Frequency = 125, 100MHz*SDRAM CAS# Latency = 2*Burst Operation•Sequential or Interleave•Burst length = programmable 1,2,4,8 or full page•Burst Read and Write•Multiple Burst Read and Single Wr...

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SeekIC No. : 004545591 Detail

WED48S8030E8SI: Features: *Single 3.3V power supply*Fully Synchronous to positive Clock Edge*Clock Frequency = 125, 100MHz*SDRAM CAS# Latency = 2*Burst Operation•Sequential or Interleave•Burst length = ...

WED48S8030E8SI Data Sheet

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Part Number:
WED48S8030E8SI
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

* Single 3.3V power supply
* Fully Synchronous to positive Clock Edge
* Clock Frequency = 125, 100MHz
* SDRAM CAS# Latency = 2
* Burst Operation
•Sequential or Interleave
•Burst length = programmable 1,2,4,8 or full page
•Burst Read and Write
•Multiple Burst Read and Single Write
* DATA Mask Control
* Auto Refresh (CBR) and Self Refresh
•4096 refresh cycles across 64ms
* Automatic and Controlled Precharge Commands
* Suspend Mode and Power Down Mode
* Industrial Temperature Range


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Ratings
Unit
Power Supply Voltage
VCC
-1.0 to +4.6
V
Input Voltage
VIN
-1.0 to +4.6
V
Output Voltage
VOUT
-1.0 to +4.6
V
Operating Temperature
TOPR
-40 to +85
°C
Storage Temperature
TSTG
-55 to 125
°C
Power Dissipation
PD
1.0
W
Short Circuit Output Current
IOS
50
mA

Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The WED48S8030E8SI is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 8 bits.
Synchronous design allows precise cycle control with the use of system clock, I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Available in a 54 pin TSOP type II package the WED48S8030E8SI is tested over the industrial temp range (-40 to +85) providing a solution for rugged main memory applications.




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