Features: · Single 3.3V power supply· Fully Synchronous to positive Clock Edge· Clock Frequency = 133, 125, and 100MHZ· SDRAM CAS Latency = 2· Burst Operation • Sequential or Interleave• Burst length = programmable 1,2,4,8 or full page&...
WED416S16030A: Features: · Single 3.3V power supply· Fully Synchronous to positive Clock Edge· Clock Frequency = 133, 125, and 100MHZ· SDRAM CAS Latency = 2· Burst...
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Features: · Single 3.3V power supply· Fully Synchronous to positive Clock Edge· SDRAM CAS Latenten...
Features: *Single 3.3V power supply*Fully Synchronous to positive Clock Edge*Clock Frequency = 125...
Features: *Single 3.3V power supply*Fully Synchronous to positive Clock Edge*Clock Frequency = 125...
Parameter | Symbol | Min | Max | Units |
Power Supply Voltage | VDD | -1.0 | +4.6 | V |
Input Voltage | VIN | -1.0 | +4.6 | V |
Output Voltage | VOUT | -1.0 | +4.6 | V |
Operating Temperature | tOPR | -40 | +85 | |
Storage Temperature | tSTG | -55 | +125 | |
Power Dissipation | PD | 1.0 | W | |
Short Circuit Output Current | IOS | 50 | mA |
The WED416S16030A is 268,435,456 bits of synchronous high data rate DRAM organized as 4 x 4,196,304 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies,programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Available in a 54 pin TSOP type II package the WED416S16030A is tested over the industrial temp range (-40°C to +85°C) providing a solution for rugged main memory applications.
*This product is subject to change without notice.