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WED3EG7218S-JD3

Features: · Double-data-rate architecture· DDR200, DDR266, DDR333 and DDR400 • JEDEC design specifi ed· BI-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Latency 2,2.5 (clock)· Programmable Burst Length (2,4,8)· Programmable Burst type (sequential...

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SeekIC No. : 004545583 Detail

WED3EG7218S-JD3: Features: · Double-data-rate architecture· DDR200, DDR266, DDR333 and DDR400 • JEDEC design specifi ed· BI-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmabl...

WED3EG7218S-JD3 Data Sheet

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Part Number:
WED3EG7218S-JD3
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Double-data-rate architecture
· DDR200, DDR266, DDR333 and DDR400
     • JEDEC design specifi ed
· BI-directional data strobes (DQS)
· Differential clock inputs (CK & CK#)
· Programmable Read Latency 2,2.5 (clock)
· Programmable Burst Length (2,4,8)
· Programmable Burst type (sequential & interleave)
· Edge aligned data output, center aligned data input.
· Auto and self refresh
· Serial presence detect
· Power supply:
    • VCC = VCCQ = 2.5V±0.2V (100, 133 and 166MHz)
    • VCC = VCCQ = 2.6V±0.1V (200MHz)
· JEDEC 184 pin DIMM package
    • JD3 PCB height: 30.48 (1.20") Max


Specifications

Parameter
Symbol
Ratings
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 to 3.6
V
Voltage on VCC supply relative to VSS
VCC, VCCQ
-1.0 to 3.6
V
Storage Temperature
TSTG
-55 to +150
°C
Power Dissipation
PD
9
W
Short Circuit Current
IOS
50
mA



Description

The WED3EG7218S-JD3 is a 16Mx72 Double Data Rate SDRAM memory module based on 128Mb DDR SDRAM component. The module consists of nine 16Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184 pin FR4 substrate.

Synchronous design of the WED3EG7218S-JD3 allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.




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