WED3DL644V

Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specifi cation is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The WED3DL644V is a 4Mx64 Synchronous DRAM confi gured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 153 lead, 17mm by 23mm, BGA.

The WED3DL644V is available in clock speeds of 133MHZ,125MHZ and 100MHZ. The range of operating frequencies,programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

The package and design provides performance enhancements via a 50% reduction in capacitance vs.

four monolithic devices. The design of the WED3DL644V includes internal ground and power planes which reduces inductance on the ground and power pins allowing for improved decoupling and a reduction in system noise.