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WED3DL328V

Features: · 53% Space Savings vs. Monolithic Solution· Reduced System Inductance and Capacitance· Pinout and Footprint Compatible to SSRAM 119 BGA· 3.3V Operating Supply Voltage· Fully Synchronous to Positive Clock Edge· Clock Frequencies of 133MHZ, 125MHZ and 100MHZ· Burst Operation· Sequ...

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SeekIC No. : 004545580 Detail

WED3DL328V: Features: · 53% Space Savings vs. Monolithic Solution· Reduced System Inductance and Capacitance· Pinout and Footprint Compatible to SSRAM 119 BGA· 3.3V Operating Supply Voltage· Fully Synchron...

WED3DL328V Data Sheet

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Part Number:
WED3DL328V
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· 53% Space Savings vs. Monolithic Solution
· Reduced System Inductance and Capacitance
· Pinout and Footprint Compatible to SSRAM 119 BGA
· 3.3V Operating Supply Voltage
· Fully Synchronous to Positive Clock Edge
· Clock Frequencies of 133MHZ, 125MHZ and 100MHZ
· Burst Operation
· Sequential or Interleave
· Burst Length = Programmable 1, 2, 4, 8 or Full Page
· Burst Read and Write
· Multiple Burst Read and Single Write
· Data Mask Control Per Byte
· Auto and Self Refresh
· Automatic and Controlled Precharge Commands
· Suspend Mode and Power Down Mode
· 119 Pin BGA, JEDEC MO-163


Specifications

Parameter Symbol Min Max Units
Power Supply Voltage VCC/VCCQ -1.0 +4.6 V
Input Voltage VIN -1.0 +4.6 V
Output Voltage VOUT -1.0 +4.6 V
Operating Temperature tOPR -0 +70 °C
Storage Temperature tSTG -55 +125 °C
Power Dissipation PD - 1.5 W
Short Circuit Output Current IOS - 50 mA



Description

The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x2Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 119 lead, 14mm by 22mm, BGA.

The WED3DL328V is an ideal SDRAM wide I/O memory solution for all high performance, computer applications which include Network Processors, DSPs and Functional ASICs.

The WED3DL328V is available in clock speeds of 133MHZ, 125MHZ and 100MHZ. The range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

The package and design provides performance enhancements via a 50% reduction in capacitance vs. two monolithic devices. The design includes internal ground and power planes which reduces inductance on the ground and power pins allowing for improved decoupling and a reduction in system noise.




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