Position: Home  > All Categories> Integrated Circuits (ICs) > WED3DG6417S

WED3DG6417S

Features: · Double-data-rate architecture· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Latency 2,2.5 (clock)· Programmable Burst Length (2,4,8)· Programmable Burst type (sequential & interleave)· Edge aligned data output, center aligned data i...

product image

WED3DG6417S Picture
See larger image
SeekIC No. : 004545561 Detail

WED3DG6417S: Features: · Double-data-rate architecture· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Latency 2,2.5 (clock)· Programmable Burst Length (2,4,8)· Pr...

WED3DG6417S Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
WED3DG6417S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/8/30

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Double-data-rate architecture
· Bi-directional data strobes (DQS)
· Differential clock inputs (CK & CK#)
· Programmable Read Latency 2,2.5 (clock)
· Programmable Burst Length (2,4,8)
· Programmable Burst type (sequential & interleave)
· Edge aligned data output, center aligned data input
· Auto and self refresh
· Serial presence detect
· JEDEC standard 200 pin SO-DIMM package
· Power supply: 2.5V ± 0.25V


Specifications

Parameter Symbol Value Units
Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V
Voltage on VCC supply relative to VSS VCC, VCCQ -1.0 ~ 3.6 V
Storage Temperature TSTG -55 ~ +150
Power Dissipation PD 8 W
Short Circuit Current IOS 50 mA

Note:
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.




Description

The WED3DG6417S is a 16Mx64 Double Data Rate SDRAM memory module based on 128Mb DDR SDRAM component. The module consists of eight 16Mx8 DDR SDRAMs in 66 pin TSOP package mounted on a 200 pin FR4 Substrate.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lenths allow the WED3DG6417S to be useful for a variety of high bandwidth, high performance memory system applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Prototyping Products
AVT4168
DE1
Tapes, Adhesives
803
AC452-2
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Resistors
A101G
3006P-1-205LF
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
View more