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WED3DG6417S

Features: · Double-data-rate architecture· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Latency 2,2.5 (clock)· Programmable Burst Length (2,4,8)· Programmable Burst type (sequential & interleave)· Edge aligned data output, center aligned data i...

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SeekIC No. : 004545561 Detail

WED3DG6417S: Features: · Double-data-rate architecture· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Latency 2,2.5 (clock)· Programmable Burst Length (2,4,8)· Pr...

WED3DG6417S Data Sheet

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Part Number:
WED3DG6417S
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Double-data-rate architecture
· Bi-directional data strobes (DQS)
· Differential clock inputs (CK & CK#)
· Programmable Read Latency 2,2.5 (clock)
· Programmable Burst Length (2,4,8)
· Programmable Burst type (sequential & interleave)
· Edge aligned data output, center aligned data input
· Auto and self refresh
· Serial presence detect
· JEDEC standard 200 pin SO-DIMM package
· Power supply: 2.5V ± 0.25V


Specifications

Parameter Symbol Value Units
Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V
Voltage on VCC supply relative to VSS VCC, VCCQ -1.0 ~ 3.6 V
Storage Temperature TSTG -55 ~ +150
Power Dissipation PD 8 W
Short Circuit Current IOS 50 mA

Note:
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.




Description

The WED3DG6417S is a 16Mx64 Double Data Rate SDRAM memory module based on 128Mb DDR SDRAM component. The module consists of eight 16Mx8 DDR SDRAMs in 66 pin TSOP package mounted on a 200 pin FR4 Substrate.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lenths allow the WED3DG6417S to be useful for a variety of high bandwidth, high performance memory system applications.




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