WD1100-12

The WD1100-12 improved MFM generator converts NRZ data into an MFM(modified frequency modulated)data stream.The derived MFM signal containing both clocks and data can then be used to record information on a Winchester disk drive utilizing this recording technique.In addtion to an MFM output,the devices generators first level write precompensation signals for use with inner track densities.A unique features of the WD1100-12 is the ability to delete a clock pulse in the outgoing MFM stream in order to record address marks.The WD1100-12 is fabricated in NMOS silicon gate technology and is available in a 20-pin plastic or ceramic dual-in-line package.

WD1100-12 has five unique features: The first one is single 5 V ssupply.The second one is 5M bit/sec data rate.The third one is write precompensation.The forth one is address mark generation.Besides,there are some absolute maximum ratings about it.Ambient temperature under bias is 0 to 50.Voltage on amy pin with respect to Vss is -0.2 V to 7.0 V. Power dissipation is 1 watt.DC electrical charactersitics(Ta is 0 to 50, Vcc is 5 V±10%, Vss is 0 V):Input low voltage(VIL) is -0.2 V min and 0.8 V max.Input high voltage(VIH) is 2.0 V min.Output low voltage(VOL) is 0.4 v max when IOL is 3.2 mA. Output high voltage(VOH) is 2.4 V min when IOH is -200 uA. Supply voltage(Vcc) is 4.5 V min, 5.0 V typ and 5.5 V max .

Well,if you are interested in WD1100-12 and want to know more,please pay more attention to our web for you will find more information about WD1100-12. Thanks for your attention!