Position: Home  > All Categories> Integrated Circuits (ICs) > W963L6ABN

W963L6ABN

Features: • Asynchronous SRAM interface• Fast access cycle time:− tRC = 70 nS (-70), 80 nS (-80)• Low power consumption:− IDDA1 = 20 mA Max.− IDDS1 = 70 A Max.• Byte write control• Wide operating conditions:− VDD = +2.3V to +2.7V or+2.7V to +3....

product image

W963L6ABN Picture
See larger image
SeekIC No. : 004545339 Detail

W963L6ABN: Features: • Asynchronous SRAM interface• Fast access cycle time:− tRC = 70 nS (-70), 80 nS (-80)• Low power consumption:− IDDA1 = 20 mA Max.− IDDS1 = 70 A Max....

W963L6ABN Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
W963L6ABN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Asynchronous SRAM interface
• Fast access cycle time:
− tRC = 70 nS (-70), 80 nS (-80)
• Low power consumption:
− IDDA1 = 20 mA Max.
− IDDS1 = 70 A Max.
• Byte write control
• Wide operating conditions:
− VDD = +2.3V to +2.7V or
+2.7V to +3.3V
• Temperature
− TA = 0°C to +70°C
− TA = -25°C to +85°C (Extended temperature)
− TA = -40°C to +85°C (Industrial temperature)


Specifications

PARAMETER
SYMBOL
VALUE
UNIT
Voltage of VDD Supply Relative to VSS
VDD
-0.5 to +3.6
V
Voltage at Any Pin Relative to VSS
VIN, VOUT
-0.5 to +3.6
V
Short Circuit Output Current
IOUT
± 50
mA
Storage Temperature
TSTG
-55 to +125
°C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, emperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.


Description

W963L6ABN is a 8M bits CMOS pseudo static random access memory (Pseudo SRAM), organized as 512K words x 16 bits. Using advanced single transistor DRAM architecture and 0.175 m process technology; W963L6ABN delivers fast access cycle time and low power consumption. It is suitable for mobile device application such as Cellular Phone and PDA, which high-density buffer is needed and power dissipation is most concerned.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Optoelectronics
SFH7770
TLP423J
Tools
TCP202
G084SN05 V.3
Resistors
A101G
3006P-1-205LF
Optical Inspection Equipment
AA924
A21K4B
Cable Assemblies
CS1W-CN114
XW2Z-500T
Memory Cards, Modules
WT32
VTL5C7
View more