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W78M32V-XBX

Features: Access Times of 70, 90, 100, 120ns Packaging• 159 PBGA, 13x22mm 1.27mm pitch 1,000,000 Erase/Program Cycles per sector Page Mode• Page size is 8 words: Fast page read access fromrandom locations within the page. Sector Architecture• Bank A (16Mb): 4Kw x 8 and 32 Kw x ...

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SeekIC No. : 004545043 Detail

W78M32V-XBX: Features: Access Times of 70, 90, 100, 120ns Packaging• 159 PBGA, 13x22mm 1.27mm pitch 1,000,000 Erase/Program Cycles per sector Page Mode• Page size is 8 words: Fast page read access ...

W78M32V-XBX Data Sheet

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Part Number:
W78M32V-XBX
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Access Times of 70, 90, 100, 120ns
Packaging
• 159 PBGA, 13x22mm 1.27mm pitch
1,000,000 Erase/Program Cycles per sector
Page Mode
• Page size is 8 words: Fast page read access from
random locations within the page.
Sector Architecture
• Bank A (16Mb): 4Kw x 8 and 32 Kw x 31
• Bank B (48Mb): 32Kw x 96
• Bank C (48Mb): 32Kw x 96
• Bank D (16Mb): 4Kw x 8 and 3Kw x 31
Both top and bottom boot blocks
Zero Power Operation
Organized as 8Mx32, user confi gurable as 2x8Mx16
Commercial, Industrial and Military Temperature
Ranges
3.3 Volt for read, erase and write operations
Simultaneous read/write operations:
• Data can be continuously read from one bank
while executing erase/program functions in
another bank
• Zero latency between read and write operations
Erase Suspend/Resume
• Suspends erase operations to allow read or
programming in other sectors of same bank
Data Polling and Toggle Bits
• Provides a software method of detecting the status
of program or erase cycles
Unlock Bypass Program command
• Reduces overall programming time when issuing
multiple program command sequences
Ready/Busy# output (RY/BY#)
• Hardware method for detecting program or erase
cycle completion
Hardware reset pin (RESET#)
• Hardware method of resetting the internal state
machine to the read mode
WP#/ACC input pin
• Write protect (WP#) function allows protection of
two outermost boot sector, regardless of sector
protect status
• Acceleration (ACC) function accelerates program
timing
Persistent Sector Protection
• A command sector protection method of locking
combinations of individual sectors and sector
groups to prevent program or erase operation
within that sector
 Password Sector Protection or Cancellation
• A sector protection method to lock combinations
of individual sectors and sector groups to prevent
program or erase operations within that sector
using a user-defi ned 64-bit password.


Pinout

Connection Diagram


Specifications

Parameter   Unit
Operating Temperature -55 to +125
Supply Voltage Range (VCC) -0.5 to +4.0 V
Storage Temperature Range -55 to +125
Endurance (write/erase cycles) 1,000,000 min. cycles

NOTES:
1. Stesses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability.
2. Minimum DC input voltage on pins A9, OE#, RESET#, and WP#/ACC is 0.5V. During voltage transitions, A9, OE#, WP#/ACC, and RESET# may overshoot VSS to 2.0V for periods of up to 20 ns. See Figure 8. Maximum DC input voltage on pin A9, OE#, and RESET# is +12.5V which may overshoot to +14.0V for periods up to 20 ns. Maximum DC input voltage on WP#/ACC is +9.5V which may overshoot to +12.0V for periods up to 20 ns.




Description

The W78M32V-XBX is a 256Mb, 3.3 volt-only Page Mode and Simultaneous Read/Write Flash memory device.

The device offers fast page access times allowing high speed microprocessors to operate without wait states.

To eliminate bus contention the device has separate chip enable (CS#), write enable (WE#) and output enable (OE#) controls. Simultaneous Read/Write Operation with Zero Latency.

The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into 4 banks, which can be considered to be four separate memory arrays as far as certain operations are concerned.

The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from another bank with zero latency (with two simultaneous operations operating at any one time). This releases the system from waiting for the completion of a program or erase operation, greatly improving system performance.

The device can be organized in both top and bottom sector confi gurations. The banks are organized as follows:




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