W53SF4BT

SF4 made with Gallium Aluminum Arsenide infrared emitting diodes. W53SF4BT has two unique features: The first one is mechanically and spectrally matched to the W51P3C photo transistor.The second one is both water clear lens and blue transparent lens available.

There are some electrical or optical charactersitics about W53SF4BT at Ta is 25.Forward voltage (VF) is 1.3 V typ and 1.6 V max when IF is 20 mA . Revrse current(IR) is 10 uA max when VR is 5 V. Capacitance(C) is 90 pF min when VF is 0 V and f is 1 MHz. Wavelength at peak emission is 880 nm min when IF is 20 mA . Spectral line half-width is 50 nm min when IF is 20 mA.

Otherwise,there are alos some absolute maximum ratings about W53SF4BT at Ta is 25.Power dissipation(PT) is 100 mW. Forward current(IF) is 50 mA.Peak forward current(IFS) is 1.2 A. Reverse voltage(VR) is 5 V.Operating temperature(Ta) is -40 to 85.Lead solder temperature is 260 for 5 seconds.Storage temperature(Tstg) is -40 to 85.