Features: · Single 5-volt operations: - 5-volt Read - 5-volt Erase - 5-volt Program· Fast Program operation: - Word-by-Word programming: 50 mS (max.)· Fast Erase operation: 100 mS (typ.)· Fast Synchronous Burst Read access time: 15/17 nS (typ.)· High performance synchronous burst read mode up to 5...
W49S201: Features: · Single 5-volt operations: - 5-volt Read - 5-volt Erase - 5-volt Program· Fast Program operation: - Word-by-Word programming: 50 mS (max.)· Fast Erase operation: 100 mS (typ.)· Fast Synch...
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PARAMETER |
RATING |
UNIT |
Power Supply Voltage to Vss Potential |
-0.5 to +7.0 |
V |
Operating Temperature |
0 to +70 |
°C |
Storage Temperature |
-65 to +150 |
°C |
D.C. Voltage on Any Pin to Ground Potential except A9 |
-0.5 to VDD +1.0 |
V |
Transient Voltage (<20 nS ) on Any Pin to Ground Potential |
-1.0 to VDD +1.0 |
V |
Voltage on OE Pin to Ground Potential |
-0.5 to 12.5 |
V |
The W49S201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K ´ 16 bits. The W49S201 supports both asynchronous & high performance synchronous burst read modes. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49S201 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.