Features: · Single 5-volt operations: - 5-volt Read - 5-volt Erase - 5-volt Program· Fast Program operation: - Byte-by-Byte programming: 50 mS (max.)· Fast Erase operation: 100 mS (typ.)· Fast Read access time: 70/120 nS· Endurance: 1K/10K cycles (typ.)· Ten-year data retention· Hardware data prot...
W49F002: Features: · Single 5-volt operations: - 5-volt Read - 5-volt Erase - 5-volt Program· Fast Program operation: - Byte-by-Byte programming: 50 mS (max.)· Fast Erase operation: 100 mS (typ.)· Fast Read ...
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PARAMETER |
RATING |
UNIT |
Power Supply Voltage to Vss Potential |
-0.5 to +7.0 |
V |
Operating Temperature |
0 to +70 |
°C |
Storage Temperature |
-65 to +150 |
°C |
D.C. Voltage on Any Pin to Ground Potential except OE |
-0.5 to VDD +1.0 |
V |
Transient Voltage (<20 nS ) on Any Pin to Ground Potential |
-1.0 to VDD +1.0 |
V |
Voltage on OE Pin to Ground Potential |
-0.5 to 12.5 |
V |
The W49F002/B/U/N is a 2-megabit, 5-volt only CMOS flash memory organized as 256K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F002/B/U/N results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.