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W3E232M16S-XSTX

Features: · Double-data-rate architecture; two data transfers per clock cycle· Data rate = 200, 266, 333, 400 Mbs· Package:• 66pin TSOP II package· 2.5V ±0.2V core power supply· 2.5V I/O (SSTL_2 compatible)· Differential clock inputs(CK and CK#)· DLL aligns DQ and DQS transition with CK·MRS ...

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SeekIC No. : 004544674 Detail

W3E232M16S-XSTX: Features: · Double-data-rate architecture; two data transfers per clock cycle· Data rate = 200, 266, 333, 400 Mbs· Package:• 66pin TSOP II package· 2.5V ±0.2V core power supply· 2.5V I/O (SSTL...

W3E232M16S-XSTX Data Sheet

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Part Number:
W3E232M16S-XSTX
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

· Double-data-rate architecture; two data transfers per clock cycle
· Data rate = 200, 266, 333, 400 Mbs
· Package:
• 66pin TSOP II package
· 2.5V ±0.2V core power supply
· 2.5V I/O (SSTL_2 compatible)
· Differential clock inputs(CK and CK#)
· DLL aligns DQ and DQS transition with CK
·MRS cycle with address key programs
• Read latency : 2, 2.5 , 3 (Clock)
• Burst length (2, 4, or 8)
• Burst type (sequential & interleave)
· Auto & Self refresh Modes
· RoHS Compliant
· Commands entered on each positive CK edge
· Internal pipelined double-data-rate (DDR) ar chi tec ture; two data accesses per clock cy cle
· Bidirectional data strobe (DQS) transmitted/ re ceived with data, i.e., source-syn chro nous data capture (one per byte)
· DQS edge-aligned with data for READs; centeraligned with data for WRITEs
· Four internal banks for concurrent operation
· Data mask (DM) pins for masking write data (one per byte)
· Programmable IOL/IOH option
· Auto precharge option
· Auto Refresh and Self Refresh Modes
· Commercial, and Industrial Temperature Rang es
· Organized as 2X32M x 16


Pinout

Connection Diagram


Specifications

Parameter   Unit
Voltage on VCC, VCCQ Supply relative to Vss -1 to 3.6 V
Voltage on I/O pins relative to VSS -0.5V to VCCQ +0.5V V
Operating Temperature TA (Mil) -55 to +125
Operating Temperature TA (Ind) -40 to +85
Storage Temperature, Plastic -55 to +125

NOTE:Stress greater than those listed under "Absolute Maximum Ratings" may cause per ma nent damage to the evice. This is a stress rating only and func tion al op er a tion of the device at these or any other conditions greater than those in di cat ed in the operational sections of this specifi cation is not implied. Exposure to ab so lute maximum rating con di tions for extended periods may affect reliability.




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