W39F010

Features:

· Single 5-volt operations
- 5-volt Read
- 5-volt Erase
- 5-volt Program
· Fast Program operation:
- Byte-by-Byte programming: 50 mS (max.)
· Fast Erase operation:
- Chip Erase cycle time: 100 mS (max.)
- Page Erase cycle time: 25 mS (max.)
· Read access time: 70/90 nS
· 32 even pages with 4K bytes
· Any individual page can be erased
· Hardware protection:
- Optional 16K byte Top/Bottom Boot Block with lockout protection
· Flexible 4K-page size can be used as Parameter Blocks
· Typical program/erase cycles:
- 1K/10K
· Twenty-year data retention
· Low power consumption
- Active current: 15 mA (typ.)
- Standby current: 15 mA (typ.)
· End of program detection
- Software method: Toggle bit/Data polling
· TTL compatible I/O
· JEDEC standard byte-wide pinouts
· Available packages: 32-pin 600 mil DIP, 32-pin PLCC, 32- pin STSOP (8 x 14 mm) and 32- pin TSOP


Pinout




Specifications

PARAMETER	RATING	UNIT
Power Supply Voltage to VSS Potential	-2.0 to +7.0	V
Operating Temperature	0 to +70	°C
Storage Temperature	-65 to +125	°C
Voltage on Any Pin to Ground Potential Except A9	-2.0 to +7.0	V
Voltage on A9 Pin to Ground Potential	-2.0 to +13.0	V

Note: Exposure to conditions beyond those listed under Absolute maximum Ratings may adversely affect the life and reliability of the device.


Description

The W39F010 is a 1Mbit, 5-volt only CMOS flash memory organized as 128K ×8 bits. For flexible erase capability, the 1Mbits of data are divided into 32 small even pages with 4 Kbytes. The byte-wide (×8) data appears on DQ7 - DQ0. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W39F010 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers.