Features: ·High Frequency = 100, 125MHz
·Package:
• 219 Plastic Ball Grid Array (PBGA), 32 x 25mm
·3.3V ±0.3V power supply for core and I/Os
·Fully Synchronous; all signals registered on positive
edge of system clock cycle
·Internal pipelined operation; column address can be changed every clock cycle
·Internal banks for hiding row access/precharge
·Programmable Burst length 1,2,4,8 or full page
·8,192 refresh cycles
·Commercial, Industrial and Military Temperature Ranges
·Organized as 64M x 72
·Weight: W364M72V-XSBX - TBD grams typicalSpecifications
| Parameter |
|
Unit |
Voltage on VCC, VCCQ Supply relative to Vss
Voltage on NC or I/O pins relative to Vss
Operating Temperature TA (Mil)
Operating Temperature TA (Ind)
Storage Temperature, Plastic |
-1 to 4.6
-1 to 4.6
-55 to +125
-40 to +85
-55 to +125 |
V
V
°C
°C
°C |
NOTE:
Stress greater than those listed under "Absolute Maximum Ratings" may cause per ma nent damage to the device. This is a stress rating only and func tion al op er a tion of the device at these or any other conditions greater than those in di cat ed in the operational sections of this specifi cation is not implied. Exposure to ab so lute maximum rating con di tions for extended periods may affect reliability.
DescriptionThe 512MByte (4.5Gb) SDRAM W364M72V-XSBX is a high-speed CMOS, dynamic random-access, memory using 9 chips containing 512M bits. Each chip is internally confi gured as a quadbank DRAM with a synchronous interface. Each of the chip's 134,217,728-bit banks is organized as 8,192 rows by 2,048 columns by 8 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-12 select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access.
The SDRAM W364M72V-XSBX provides for programmable READ or WRITE burst lengths of 1, 2, 4 or 8 locations, or the full page, with a burst terminate option. An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence.
The 4.5Gb SDRAM W364M72V-XSBX uses an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, random-access operation. The 4.5Gb SDRAM is designed to operate at 3.3V. An auto refresh mode is provided, along with a power-saving, power-down mode.
W364M72V-XSBX Data Sheet
