Features: ` Single 5-volt operations: - 5-volt Read - 5-volt Erase- 5-volt Program` Fast Program operation: - Word-by-Word programming: 50 mS (max.)` Fast Erase operation: 100 mS (typ.)` Fast Read access time: 45/50/55/70 nS` Endurance: 1K/10K cycles (typ.)` Ten-year data retention` Hardware data ...
W29F102: Features: ` Single 5-volt operations: - 5-volt Read - 5-volt Erase- 5-volt Program` Fast Program operation: - Word-by-Word programming: 50 mS (max.)` Fast Erase operation: 100 mS (typ.)` Fast Read a...
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PARAMETER |
RATING | UNIT |
Power Supply Voltage to Vss Potential | -0.5 to +7.0 | V |
Operating Temperature | 0 to +70 | °C |
Storage Temperature | -65 to +150 | °C |
D.C. Voltage on Any Pin to Ground Potential except OE | -0.5 to VDD +1.0 | V |
Transient Voltage (<20 nS ) on Any Pin to Ground Potential | -1.0 to VDD +1.0 | V |
Voltage on OE Pin to Ground Potential | -0.5 to 12.5 | V |
The W29F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29F102 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.