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W29EE512

Features: · Single 5-volt program and erase operations· Fast page-write operations - 128 bytes per page - Page program cycle: 10 mS (max.) - Effective byte-program cycle time: 39 mS - Optional software-protected data write· Fast chip-erase operation: 50 mS· Read access time: 70/90/120 nS· Typical ...

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SeekIC No. : 004544587 Detail

W29EE512: Features: · Single 5-volt program and erase operations· Fast page-write operations - 128 bytes per page - Page program cycle: 10 mS (max.) - Effective byte-program cycle time: 39 mS - Optional softw...

W29EE512 Data Sheet

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Part Number:
W29EE512
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

· Single 5-volt program and erase operations
· Fast page-write operations
   - 128 bytes per page
   - Page program cycle: 10 mS (max.)
   - Effective byte-program cycle time: 39 mS
   - Optional software-protected data write
· Fast chip-erase operation: 50 mS
· Read access time: 70/90/120 nS
· Typical page program/erase cycles: 1K/10K
· Ten-year data retention
· Software and hardware data protection
· Low power consumption
   - Active current: 50 mA (max.)
   - Standby current: 100 mA (max.)
· Automatic program timing with internal VPP generation
· End of program detection
   - Toggle bit
   - Data polling
· Latched address and data
· TTL compatible I/O
· JEDEC standard byte-wide pinouts
· Available packages: 32-pin PLCC, TSOP and VSOP


Pinout

Connection Diagram


Specifications

PARAMETER RATING UNIT
Power Supply Voltage to Vss Potential -0.5 to +7.0 V
Operating Temperature 0 to +70 °C
Storage Temperature -65 to +150 °C
D.C. Voltage on Any Pin to Ground Potential Except A9 -0.5 to VDD +1.0 V
Transient Voltage (<20 nS ) on Any Pin to Ground Potential -1.0 to VDD +1.0 V
Voltage on A9 and #OE Pin to Ground Potential -0.5 to 12.5 V



Description

The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE512 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.




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