Features: • SmartVoltage Technology
− VDD = 2.7V, 3.3V or 5V
− VPP = 2.7V, 3.3V, 5V or 12V
• User-Configurable x 8 or x 16 Operation
• High-Performance Access Time
− 85 nS (5V ±0.25V), 90 nS (5V ±0.5V), 100 nS (3.3V ±0.3V), 120 nS (2.7V to 3.6V)
• Operating Temperature
− 0° C to +70° C
• Optimized Array Blocking Architecture
− Two 4k-word (8k-byte) Boot Blocks
− Six 4k-word (8k-byte) Parameter Blocks
− Seven 32k-word (64k-byte) Main Blocks
− Top Boot Location (W28V400TT)
− Bottom Boot Location (W28V400BT)
• Extended Cycling Capability
− Minimum 100,000 Block Erase Cycles
• Low Power Management
− Deep Power-down Mode
− Automatic Power Savings Mode Decreases ICCR in Static Mode
• Enhanced Automated Suspend Options
− Word/Byte Write Suspend to Read
− Block Erase Suspend to Word/Byte Write
− Block Erase Suspend to Read
• Enhanced Data Protection Features
− Absolute Protection with VPP VPPLK
− Block Erase, Full Chip Erase, Word/Byte Write and Lock-Bit Configuration Lockout during Power Transitions
− Block Blocks Protection with #WP = VIL
• Automated Word/Byte Write and Block Erase
− Command User Interface (CUI)
− Status Register (SR)
• SRAM-Compatible Write Interface
• Industry-Standard Packaging
− 48-Lead TSOPPinout
SpecificationsOperating Temperature During Read, Block Erase, and Word/Byte Write..................... 0° C to +70° C
(1) Temperature under Bias ...................................................................................... -10° C to +80° C
Storage Temperature............................................................................................. 65° C to +125° C
Voltage On Any Pin (except VDD, VPP and #RESET) ..................................................... -0.5V to +7.0V (2)
VDD Supply Voltage......................................................................................................-0.2V to +7.0V (2)
VPP Update Voltage during Block Erase and Word/Byte Write ............................. -0.2V to +14.0V (2, 3)
#RESET Voltage.......................................................................................................-0.5V to +14.0V (2, 3)
Output Short Circuit Current....................................................................................................100 mA (4)
1. Operating temperature is for commercial temperature product defined by this specification.
2. All specified voltages are with respect to VSS. Minimum DC voltage is -0.5V on input/output pins and -0.2V on VDD and VPP pins. During transitions, this level may undershoot to -2.0V for periods <20 nS. Maximum DC voltage on input/output pins and VDD is VDD +0.5V which, during transitions, may overshoot to VDD +2.0V for periods <20 nS.
3. Maximum DC voltage on VPP and #RESET may overshoot to +14.0V for periods <20 nS.
4. Output shorted for no more than one second. No more than one output shorted at a time.
DescriptionThe W28V400B/T Flash memory with SmartVoltage technology is a high-density, cost-effective, nonvolatile, read/write storage solution for a wide range of applications. It operates off of VDD = 2.7V and VPP = 2.7V. This low voltage operation capability realize battery life and suits for cellular phone application. Its Boot, Parameter and Main-blocked architecture, as well as low voltage and extended cycling. These features provide a highly flexible device suitable for portable terminals and personal computers. Additionally, the enhanced suspend capabilities provide an ideal solution for both code and data storage applications. For secure code storage applications, such as networking where code is either directly executed out of flash or downloaded to DRAM, the device offers four levels of protection. These are: absolute protection, enabled when VPP VPPLK; selective hardware blocking; flexible software blocking; or write protection. These alternatives give designers comprehensive control over their code security needs. The device is manufactured on 0.35 m process technology. It comes in industry-standard package: the 48-lead TSOP, ideal for board constrained applications.
W28V400T Data Sheet
