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W28F321BT

Features: • 32M Density with 16 Bit I/O Interface• High-Performance Reads− 70/25 nS 8-Word Page Mode• Configurative 4-Plane Dual Work− Flexible Partitioning− Read operations during Block Erase or (Page Buffer) Program− Status Register for Each Partition...

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SeekIC No. : 004544559 Detail

W28F321BT: Features: • 32M Density with 16 Bit I/O Interface• High-Performance Reads− 70/25 nS 8-Word Page Mode• Configurative 4-Plane Dual Work− Flexible Partitioning− Read...

W28F321BT Data Sheet

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Part Number:
W28F321BT
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

• 32M Density with 16 Bit I/O Interface
• High-Performance Reads
− 70/25 nS 8-Word Page Mode
• Configurative 4-Plane Dual Work
− Flexible Partitioning
− Read operations during Block Erase or (Page Buffer) Program
− Status Register for Each Partition
• Low Power Operation
− 2.7V Read and Write Operations
− Automatic Power Savings Mode Reduces
• Enhanced Code + Data Storage
− 5 S Typical Erase/Program Suspends
• OTP (One Time Program) Block
− 4-Word Factory-Programmed Area
− 4-Word User-Programmed Area
• High Performance Program with Page Buffer
− 16-Word Page Buffer
− 5 S/ Word (Typ.) at 12V VPP
• Operating Temperature
− -40°C to +85°C
• CMOS Process (P-type silicon substrate)
• Flexible Blocking Architecture
− Eight 4k-word Parameter Blocks
− Sixty-three 32k-word Main Blocks
− Top or Bottom Parameter Location
• Enhanced Data Protection Features
− Individual Block Lock and Block Lock-Down with Zero-Latency
− All blocks are locked at power-up or device reset
− Absolute Protection with VPP VPPLK
− Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions
• Automated Erase/Program Algorithms
− 3.0V Low-Power 11 S/ Word (Typ.) Programming
− 12V No Glue Logic 9 S/ Word (Typ.) Production Programming and 0.5s Erase (Typ.)
• Cross-Compatible Command Support
− Common Flash Interface (CFI)
− Basic Command Set
• Extended Cycling Capability
− Minimum 100,000 Block Erase Cycles
• Chip-Size Packaging
− 48-Pin (12 mm x 20 mm) TSOP
• ETOX™ Flash Technology
• No designed or rated as radiation hardened
* ETOX is a trademark of Intel Corporation.


Pinout

Connection Diagram


Specifications

Operating Temperature
During Read, Erase and Program ..................................................................................... -40°C to +85°C(1)
Storage Temperature
During under Bias ................................................................................................................ -40°C to +85°C
During non Bias .............................. ................................................................................ .. -65°C to +125°C
Voltage On Any Pin
(except VDD and VPP) ......... .......................................................................................... -0.5V to VDD +0.5V(2)
VDD Supply Voltage......................... ...................................................................................... -0.2V to +3.9V(2)
VPP Supply Voltage.................................................................................................... .... -0.2V to +12.6V(2,3,4)
Output Short Circuit Current............. ............................................................................. ...................100 mA(5)
*WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions" may affect device reliability.


Description

The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide range of applications. The product can be operated at VDD = 2.7V to 3.6V and VPP = 1.65V to 3.6V or 11.7V to 12.3V. Its low voltage operation capability greatly extends battery life for portable applications.

The W28F321 provides high performance asynchronous page mode. It allows code execution directly from Flash, thus eliminating time-consuming wait states. Furthermore, its newly configurative partitioning architecture allows flexible dual work operation.

The memory array block architecture utilizes Enhanced Data Protection features, and provides separate Parameter and Main Blocks that provide maximum flexibility for safe nonvolatile code and data storage.

Fast program capability is provided through the use of high speed Page Buffer Program. Special OTP (One Time Program) block provides an area to store permanent code such as a unique number.




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