Features: · High speed access time: 120/150 nS (max.)· Read operating current: 30 mA (max.)· Erase/Programming operating current 30 mA (max.)· Standby current: 100 mA (max.)· Single 5V power supply· +14V erase/+12V programming voltage· Fully static operation· All inputs and outputs directly TTL/CM...
W27C4096: Features: · High speed access time: 120/150 nS (max.)· Read operating current: 30 mA (max.)· Erase/Programming operating current 30 mA (max.)· Standby current: 100 mA (max.)· Single 5V power supply·...
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PARAMETER | RATING | UNIT |
Ambient Temperature with Power Applied | -55 to +125 | °C |
Storage Temperature | -65 to +150 | °C |
Voltage on all Pins with Respect to Ground Except OE/VPP, A9 and VCC Pins |
-0.5 to VCC +0.5 | V |
Voltage on OE/VPP Pin with Respect to Ground | -0.5 to +14.5 | V |
Voltage on A9 Pin with Respect to Ground | -0.5 to +14.5 | V |
Voltage VCC Pin with Respect to Ground | -0.5 to +7 | V |
The W27C4096 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 262144 ´ 16 bits that operates on a single 5 volt power supply. The W27C4096 provides an electrical chip erase function.