Features: · High speed access time: 10/12 nS (max.)· Low power consumption: - Active: 530 mW (max.)· Single +3.3V power supply· Fully static operation - No clock or refreshing· All inputs and outputs directly TTL compatible· Three-state outputs· Data byte control - LB (I/O1-I/O8), UB (I/O9-I/O16)·...
W26L010A: Features: · High speed access time: 10/12 nS (max.)· Low power consumption: - Active: 530 mW (max.)· Single +3.3V power supply· Fully static operation - No clock or refreshing· All inputs and output...
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PARAMETER | RATING | UNIT |
Supply Voltage to VSS Potential | -0.5 to +7.0 | V |
Input/Output to VSS Potential | -0.5 to VDD +0.5 | V |
Allowable Power Dissipation | 1.5 | W |
Storage Temperature | -65 to +150 | °C |
Operating Temperature | 0 to +70 | °C |
The W26L010A is a high-speed, low-power CMOS static RAM organized as 65,536 ´ 16 bits that operates on a single 3.3-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.
The W26L010A has an active low chip select, separate upper and lower byte selects, and a fast output enable. No clock or refreshing is required. Separate byte select controls (LB and UB ) allow individual bytes to be written and read. LB controls I/O1-I/O8, the lower byte. UB controls I/O9- I/O16, the upper byte. This device is well suited for use in high-density, high-speed system applications